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High efficient GaN-based laser diodes with tunnel junction: Applied Physics  Letters: Vol 103, No 4
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4

BluGlass — Brighter future, lower temperature - Edison Group
BluGlass — Brighter future, lower temperature - Edison Group

World's smallest mass-produced GaN laser chip from silicon working substrate
World's smallest mass-produced GaN laser chip from silicon working substrate

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting  Diode Chips | ACS Applied Electronic Materials
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials

Nanomaterials | Free Full-Text | Narrow-Linewidth GaN-on-Si Laser Diode  with Slot Gratings
Nanomaterials | Free Full-Text | Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

Output light power of InGaN-based violet laser diodes improved by using a  u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1"  ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label>  <p>Project supported by the ...
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...

PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD  System | Semantic Scholar
PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser  diodes with a reduction of carrier loss in the waveguide layers: Journal of  Applied Physics: Vol 130, No 17
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17

Semipolar GaN-based laser diodes for Gbit/s white lighting communication:  devices to systems
Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Smart-cut-like laser slicing of GaN substrate using its own nitrogen |  Scientific Reports
Smart-cut-like laser slicing of GaN substrate using its own nitrogen | Scientific Reports

Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power  Under Continuous-Wave Operation | Semantic Scholar
Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar

Kyocera process for world's smallest GaN laser IC
Kyocera process for world's smallest GaN laser IC

Micromachines | Free Full-Text | InGaN/GaN Distributed Feedback Laser  Diodes with Surface Gratings and Sidewall Gratings
Micromachines | Free Full-Text | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings

Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics
Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics

Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut
Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut

Reducing power losses in indium gallium nitride laser diodes on silicon
Reducing power losses in indium gallium nitride laser diodes on silicon

InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD

Structure of GaN laser. | Download Scientific Diagram
Structure of GaN laser. | Download Scientific Diagram

a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... |  Download Scientific Diagram
a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram

A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN:  Applied Physics Letters: Vol 107, No 15
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15

Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... |  Download Scientific Diagram
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram

Micromachines | Free Full-Text | Improving Output Power of InGaN Laser  Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Thermal analysis of GaN-based laser diode mini-array<xref  rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn  id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the  National Key Research and Development Program of China (Grant Nos ...
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...

BluGlass Announces Entry into GaN Laser Diode Business
BluGlass Announces Entry into GaN Laser Diode Business

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by  plasma-assisted molecular beam epitaxy - Advances in Engineering
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering