Embedding diodes in normally-off GaN transistors
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure | ACS Nano
Medium-Voltage Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties | Scientific Reports
Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth | Scientific Reports
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
Conductivity Modulation in Vertical GaN PiN Diode - News
Gallium nitride vertical junction barrier Schottky diodes
PTC Website
Graphene-GaN Schottky diodes | SpringerLink
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction | SpringerLink
Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces | ACS Applied Materials & Interfaces
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
A Seriously High-Power Gallium Nitride Diode | Engineering.com
Crystals | Free Full-Text | The Study of High Breakdown Voltage Vertical GaN -on-GaN p-i-n Diode with Modified Mesa Structure
Review of Recent Progress on Vertical GaN-Based PN Diodes | SpringerLink
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
Rounding Up Schottky Barrier Diode's Exploits With Wide Bandgap Materials - News
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques | Scientific Reports
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
